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 Posted: Thu 22:58, 10 Feb 2011 Post subject: ECR sputtering synthesis of carbon nitride film _4 |
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ECR sputtering synthesis of carbon nitride thin films
Allegedly the same as synthetic diamond hardness, high thermal conductivity of the mouth. N. And observed by transmission electron microscope to the presence of ceramics,[link widoczny dla zalogowanych], but very low nitrogen concentration in the film, its properties are not clear. To this end,[link widoczny dla zalogowanych], the technical personnel using the carbon target and nitrogen as raw materials, while taking advantage of ECR sputtering synthesis of carbon nitride films. Specific approach is to import the ECR nitrogen plasma sputtering equipment room, around the plasma chamber equipped with magnetic coil. Microwave plasma is produced with 245GHz. Cylindrical carbon target will be placed in the plasma chamber near the exit. Plus the DC bias for sputtering. Floating power base in the state, changing the gas pressure to change depending on the matrix potential of the gas pressure. Deposition rate of change in l between a 3.5nm/mln, film thickness on the 150nn1. By XPS (X-ray photoelectron spectroscopy) analysis obtained film chlorine to carbon ratio depend on the substrate potential without substrate heating synthetic film NIC compared with the matrix potential of the relationship table BenQ body potential in ~ 45V or less, thin 8 Plasma Application Technology Bulletin No. 6 of 2000 film N / c ratio of 0.5, the matrix potential in the vicinity of a 50V, N / C ratio increased dramatically, up to 135 cN basically the same stoichiometric composition. When the potential for further negative growth substrate,[link widoczny dla zalogowanych], the films of carbon nitrogen ratio decreased. By Rutherford backscattering, elastic recoil particle detection in the film also confirmed the high nitrogen to carbon ratio of elastic recoil particle detection method based on depth analysis of the results, nitrogen,[link widoczny dla zalogowanych], carbon atoms in the film depth direction distribution is very uniform. In addition, the synthesis of film distribution is very uniform. In addition,[link widoczny dla zalogowanych], the synthesis of thin film is also recognized <10% of the oxygen atoms to enter. Matrix potential caused by XPS-NIs spectra and Raman spectra changes showed that unheated base station into a thin film of Nls peak position in the nitrogen carbonation rate of a sharp increase in the matrix potential of 50V nearby from 3995eV drift to 3985eV the low binding energy side. And when the substrate potential of 40V in the Raman spectra of films synthesized I300 - 1700cm Department has reported wide-SP carbon peak, and shows the typical Raman spectra of amorphous carbon films, however, with the potential increase in the matrix, from sP carbon trapped in the peak decreased. And this sets into the film, observed near the lOSOcm weak Raman peak. 1050crn near the peak, the specific attribution is not clear, but according to the report, observed at 1100cm is considered near-nan in the N micro-crystals from the Raman spectra of XPS and Raman spectroscopy from the above obtained results suggest, the matrix potential in a 50V near, with the films nitrogen concentration of the end station state changes; without substrate heating units into the film substrate at different potentials in the AFM (atomic force microscopy) image display, nitrogen to carbon ratio of the small film is formed on a relatively smooth surface; increase in the concentration of nitrogen from the film area was observed in the synthesis of micro-crystalline film surface microstructure. Ceramics obtained by the average size of AFM does not heat the substrate in the synthesis of less than 50nm, but the average particle size as the temperature increases. Matrix potential of a 50V, when the substrate temperature of 600C units into the membrane XPS-Nls peak position shifted to 400.3eV energy side of the high end units. The XPS carbon nitride binding energy, there have been many reports. Y. Taki and others on the chemical combination of amorphous carbon nitride made discussions, forecast SPCN binding energy of 4003eV; addition, sKnbaYashi and others also suggest SPCN binding energy of 400.3-4oo5ev the substrate temperature of 600 ~ C, the matrix potential 50V units into a film when the XRD results and the calculated S-N and a one (= 3N powder x-ray diffraction patterns were compared. experimental thin-film x-ray diffraction equipment, angle of incidence set to 1. by film XRD figure includes a large half-width of the peak, indicating the low crystallinity films. experiments are close to the surface of white space N N and a theoretical value. other than the theoretical lattice constant although the lattice constant of N revealed small, but very close to the transmission electron microscope electron beam diffraction results reported from 0 to c3N crystal lattice constant. These results indicate that the film composition, chemical bonding and structure are strongly dependent on ion energy is equivalent to exposure potential of the matrix, the matrix potential of the vicinity of a 50V, the films in the dramatic increase in the concentration of chlorine at the same time, x-ray diffraction confirmed the formation of crystalline carbon nitride. Although the detailed mechanism of crystal structures and synthesis needs further study, but has shown that high plasma ECR low energy density of radiation on the formation of carbon nitride is effective. Xiaoqing Quoted vacuum
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