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gan-based semiconductor materials in recent years is widely used to make short-wavelength optoelectronic devices, led sign such as light emitting diodes (leds) and laser diodes (lds). present reports on the growth of gan materials and documents are more of a small amount on the chip manufacturing report also is limited to a gan etching and ohmic contact, specific to the technical aspects of engineering design are few reports.
vf increased. pi according to various characteristics of the territory of the chip show that the following 20ma, neon sign various gan-based led chips are linear pi characteristics of the two mosaic map of the chip size and 350μm & time350μm diagonal layout diagonal electrode chip in less than 30ma the pi characteristics ofessentially the same, when the current is larger, the chip size of a large optical power is greater than the small size of the chip. another 350μm & time350μm p diagonal wire electrodeaway from the territory of the diagonal electrode chip n electrodes, in the normal operating current (<30ma) under high optical power, but the current power saturation faster.
the luminous efficiency will reach 120 ~ 130lm / w or more; inindoor lighting / lighting products, the product of light efficiency will reach 100lm / w or more, the unit cost reduced by at least 40% than it is now. in addition, with the increase involume of business and project technology products on the rise, 2010, led message board companies in the "863 project - power type led lighting device of the module" project in product expansion, 180 jobs have been added , forming an annual output of 10 million sets of led light source / light industrial scale.