logoxgvb
Joined: 30 Aug 2010
Posts: 1580
Read: 0 topics
Warns: 0/5
Location: hdfttv
|
 Posted: Sun 20:33, 28 Nov 2010 Post subject: PUMA shoes On Sale Three-step direct bonding of hy |
|
|
,[link widoczny dla zalogowanych]
Three-step direct bonding of hydrophilic silicon wafer processing method and interface electrical characteristics
icitytreatmentandit'seleclrlcalproperty4 Conclusion hydrophilic silicon direct bonding in the process affect the success of bonding and electrical properties of the interface cable key week. This work is based on analysis of the microscopic mechanism of hydrophilic and hydrophilic transition of different cleaning process. Presented a unique hydrophilic three-step approach. The results show that. This method can achieve successful bonding. They can exhibit Ohmic characteristics of the interface so. This method is expected to power electronic devices, such as San electronic devices and VLSI silicon translation made by SOB to play an important role. References 1 Wang Haijun offer support. Ye Ting show. Preserves lighting. Electric power to the technology. 1996. (1) :67 - 692Hedin. WangXing. ChenXing-Bi. Instab, ityolIheInterla ~ lelS ● IrlSBiconWaterDIre ~ Bonding,[link widoczny dla zalogowanych], ICStCT. '98. Peking3Its11oM. KemFW,[link widoczny dla zalogowanych], et called IEEETmns. SemiconductorManulactudng. 1 beep. 6 (3): 2 ~ 2614 Quail Tin nG. ZhanJ. Ton. O. ele1. ~ Emel by the Ph ~ ique. A butterfly. O4 (9): 79 ~ 8l5AdarmooAWTheP when the roundworm lOhe ~ slO '. fSurl ~ s. JohnW-Sweet & So. NewYo. 19766Nl snapped WWFundamonlldsofDetergency. R remuneration '. Id. Newyodk. 19507Sbl amidships. Ben ~ tssonJ ~ Jmalofeloctronmla. 1 mackerel 9,21:846 ~ B4B8 He Jin. Wang. Array Star Bute. Silicon direct sound health and Characterization of the pro-surgery treatment. Electronic Science and Technology University. Pat hired 9StnBe ~ gtlsonand0I. Engslrom. dspenmJo ~ Jm called ofa;) PliKIp na b. That most of. 30:356 ~ Liu I Nanbu County. Electronics & Electrical move now to study the areas of solid new device. In the domestic ThreeStepsMethodofHydrophilicityTreatmentOnSiliconWaferDirectBondingandBondingInterfaceElectricalPropertiesHEJin. CHENXingbl,[link widoczny dla zalogowanych], VANGXi (1nstituteofMIcmelenbonics.Unlversi ~ ofElectricalSclenGeendTechnologY.Chengdu, 61o054.ONne) Al ~ trmct: Thesucx; essfulsiliconws ~ erdirectbondlngmainlydependsonthegoodhydrcPhll ~ llytreatmentbepretxx ~ Ing. Basedonthe ∞ hiss when oIhanismaf Shí mouth stuffed Safm phnIc} hit ementenddledafthedecloningedu ~ onoftthesitl ∞ n8u-aoe,[link widoczny dla zalogowanych], theunI destroyed threestepsmethedofhydroPhiIk: itytreatmentha3beerldevelopedinthepaper, whIchcarlnotonlyrealizesuocessflJIbonding, butalsoavoidthelargesizeamorphousSiOgcown-uPwhichG ~ usesthebsrrlecsontheeIe Shuai Ding anspodIrlthebondinginterlaceAsaresu ~, theIde-aibondingintlBc ~ cecanbeoblainedbyn, KeywOldS: II-resistant pseudo-nwafer ; b ~ ding; hydrephllIoltytrealmeat; interface 'power static material) 20o0.31 (1) 59
相关的主题文章：
[link widoczny dla zalogowanych]
[link widoczny dla zalogowanych]
[link widoczny dla zalogowanych]
The post has been approved 0 times
|
|
